Search results for "Hybrid silicon laser"
showing 7 items of 7 documents
Photonic-crystal silicon-nanocluster light-emitting device
2006
We report on enhanced light extraction from a light-emitting device based on amorphous silicon nanoclusters, suitable for very-large-scale integration, and operating at room temperature. Standard low-cost optical lithography is employed to fabricate a two-dimensional photonic crystal onto the device. We measured a vertical emission with the extracted radiation enhanced by over a factor of 4, without the aid of any buried reflector. These achievements demonstrate that a cost-effective exploitation of photonic crystals is indeed within the reach of semiconductor industry and open the way to a new generation of nanostructured silicon devices in which photonic and electronic functions are integ…
Particle Detectors made of High Resistivity Czochralski Grown Silicon
2004
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Silicon germanium platform enabling mid-infrared to near-infrared conversion for telecom and sensing applications
2014
This paper presents the potential of silicon germanium waveguides in the nonlinear conversion of light from mid-infrared wavelengths to the telecom band utilizing four-wave mixing. Design aspects and first characterization results of fabricated devices are presented.
Finely tunable laser based on a bulk silicon wafer for gas sensing applications
2016
In this work a very simple continuously tunable laser based on an erbium ring cavity and a silicon wafer is presented. This laser can be tuned with very fine steps, which is a compulsory characteristic for gas sensing applications. Moreover the laser is free of mode hopping within a spectral range sufficiently wide to match one of the ro-vibrational lines of a target molecule. Here the proposed laser reached, at ∼1530 nm, a continuous tuning range of around 950 pm (>100 GHz) before mode hopping occurred, when a silicon wafer of 355 μm thickness was used. Additionally, the laser can be finely tuned with small tuning steps of <12 pm, achieving a resolution of 84.6 pm °C-1 and by using a therm…
Advanced nonlinear signal processing in silicon-based waveguides
2015
This talk presents recent progress in optical signal processing based on compact waveguides fabricated mainly using silicon germanium alloys. Applications include supercontinuum generation, wavelength conversion and signal regeneration.
Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
2013
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
Fabrication and Characterization of Polymeric Optical Waveguides Using Standard Silicon Processing Technology
2005
We report the fabrication and characterization of a rib polymeric waveguide having a thick layer of oxidized porous silicon as an innovative solution for the lower cladding. The waveguide was fabricated using standard silicon substrates and Si-based technology. The multimodal guiding structure has a polymethylmetacrylate (PMMA) core and the innovative lower cladding was obtained by thermal oxidation of a porous silicon layer. The waveguide does not have the upper cladding. Propagation loss measurements were performed at 1.48 /spl mu/m using the cut-back method. We obtained propagation loss of about 1.7 dB/cm, confirming the possibility to use the porous silicon oxide as the lower cladding l…